26.5GHz – 40GHz Low Noise Amplifier

955AF-30/18/599, 26.5GHz – 40GHz, 3dB Noise Figure, 30dB Small Signal Gain

Product Description

Mi-Wave’s 955 Series microwave and millimeter-wave Ka-band low noise amplifiers are engineered for high-performance receiver systems requiring low noise figure, high gain, and strong output power across the Ka-band spectrum. These LNAs are designed for laboratory, fielded, and production environments where receiver sensitivity, dynamic range, and repeatable performance are critical.

A representative model in the series is the 955AF-30/18/599 Ka-band Low Noise Amplifier, operating over a 26.5 GHz to 40 GHz frequency range, fully covering the Ka-band used in satellite communications, radar systems, and advanced RF test platforms. This amplifier delivers 30 dB nominal small-signal gain, with measured performance reaching approximately 38 dB across the band, while maintaining an exceptionally low 3 dB maximum noise figure (with 2.5–2.8 dB typical performance over the band). The amplifier also provides +18 dBm typical saturated output power, with measured performance up to +25 dBm over the band, enabling robust signal handling in demanding Ka-band receiver front ends.

As the first active stage in Ka-band receive chains, low noise amplifiers play a decisive role in overall system noise figure and dynamic range. The 955AF-30/18/599 incorporates regulated biasing and a rugged mechanical design to ensure stable, repeatable operation under varying operating conditions, making it well suited for high-performance Ka-band millimeter-wave receiver applications.

Specifications

Parameter Specification
Frequency Range 26.5 GHz to 40 GHz
Band Ka-band
Small Signal Gain 30 dB nominal (≈38 dB over band)
Noise Figure 3 dB max (2.5–2.8 dB typical over band)
Output Power @ Psat +18 dBm typical (up to +25 dBm over band)
Bias Voltage +5 V to +8 V (typically +6 V)
DC Current ~163 mA typical
Maximum RF Input Power (CW) 0 dBm
Configuration Low Noise Amplifier (LNA)
Series 955 Series
Operating Temperature Case temperature not to exceed +60 °C
*Actual product may be different from the image shown per customers specifcations
*All data presented is collected from a sample lot.
* Actual data may vary unit to unit, slightly.
*All testing was performed under +25 °C case temperature.
*Consult factory to confirm if material, plating, size, shape, orientation and any electrical parameter is critical for the application as website information is for reference only.
*Millimeter Wave Products, Inc. reserves the right to change the information presented on website without notice as we continue to enhance the performance and design of our products.
Improve VSWR Performance with Mi-Wave’s Series 115 Faraday Isolators
Improve amplifier stability and overall RF system performance with Mi-Wave’s Series 115 Faraday Isolators. Designed to help improve VSWR performance, these isolators reduce reflected power and protect sensitive RF and microwave components from mismatch-related stress. 

Interested in this Amplifier or other Mi-Wave solutions?

The standard models shown represent only part of Mi-Wave’s broader product capabilities.

Custom configurations are available to support specific frequency bands, interfaces, and application requirements, enabling optimized solutions for specialized RF, microwave, and millimeter-wave systems.

Interested in this product or other Mi-Wave solutions?

Contact our team to discuss your frequency range, interface needs, and application requirements.

Custom configurations are available for specialized RF, microwave, and millimeter-wave systems.

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