50GHz – 66GHz Low Noise Amplifier

955U-50-66-22-15-383, Small Signal Gain 22dB, Output Saturated Power +15dBm

Product Description

Mi-Wave’s 955 Series microwave and millimeter-wave V-band low noise amplifiers are designed for receiver systems that require moderate gain, strong output power capability, and stable performance across wide millimeter-wave bandwidths. These LNAs support laboratory, fielded, and production environments where signal conditioning, dynamic range, and reliability are critical.

A representative model in the series is the 955U-50/66/22/15/383 V-band Low Noise Amplifier, operating over a 50 GHz to 66 GHz frequency range, covering a substantial portion of the V-band spectrum used in radar systems, satellite communications, and millimeter-wave test platforms. This amplifier provides 22 dB typical small-signal gain, with measured performance exceeding 22 dB across the band, and delivers +15 dBm typical saturated output power. This balance of gain and output power makes the amplifier well suited for receiver front ends and intermediate amplification stages in V-band RF systems.

As a critical stage in millimeter-wave receive chains, V-band low noise amplifiers influence overall system signal levels and stability. The 955U-50/66/22/15/383 incorporates regulated biasing and a robust mechanical design to ensure repeatable performance under varying operating conditions. Its compact implementation enables straightforward integration into advanced V-band millimeter-wave receiver architectures for communications, sensing, and test applications

Specifications

Parameter Specification
Frequency Range 50 GHz to 66 GHz
Band V-band
Small Signal Gain 22 dB typical (>22 dB over band)
Output Saturated Power @ Psat +15 dBm typical (>+15 dBm over band)
Noise Figure Not specified
Bias Voltage +8 V typical (+6 V @ 150 mA typical)
DC Current Approximately 150 mA typical
Maximum RF Input Power (CW) 0 dBm maximum
Configuration Low Noise Amplifier (LNA)
Series 955 Series
Operating Temperature Case temperature not to exceed +60 °C
*Actual product may be different from the image shown per customers specifcations
*All data presented is collected from a sample lot.
* Actual data may vary unit to unit, slightly.
*All testing was performed under +25 °C case temperature.
*Consult factory to confirm if material, plating, size, shape, orientation and any electrical parameter is critical for the application as website information is for reference only.
*Millimeter Wave Products, Inc. reserves the right to change the information presented on website without notice as we continue to enhance the performance and design of our products.
Improve VSWR Performance with Mi-Wave’s Series 115 Faraday Isolators
Improve amplifier stability and overall RF system performance with Mi-Wave’s Series 115 Faraday Isolators. Designed to help improve VSWR performance, these isolators reduce reflected power and protect sensitive RF and microwave components from mismatch-related stress. 

Interested in this Amplifier or other Mi-Wave solutions?

The standard models shown represent only part of Mi-Wave’s broader product capabilities.

Custom configurations are available to support specific frequency bands, interfaces, and application requirements, enabling optimized solutions for specialized RF, microwave, and millimeter-wave systems.

Interested in this product or other Mi-Wave solutions?

Contact our team to discuss your frequency range, interface needs, and application requirements.

Custom configurations are available for specialized RF, microwave, and millimeter-wave systems.

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