0.1 GHz – 40 GHz, Voltage Controlled Attenuator

900-.1/40/25/KF, 2.92 mm (K) Coaxial Connector, Power Handling +20 dBm, Attenuation Range 25 dB

900-.1/40/25/KF – 0.1–40 GHz Broadband Voltage Controlled Attenuator

The 900-.1/40/25/KF is a broadband PIN diode voltage controlled attenuator operating from 0.1 GHz to 40 GHz. Designed for microwave and high-frequency RF applications, this attenuator provides a 25 dB attenuation range, +20 dBm power handling, and continuous analog attenuation control. Featuring 2.92 mm (K) coaxial connectors, the unit supports integration into broadband RF systems, test equipment, and communication applications.


Description

Mi-Wave’s 900 Series Broadband PIN Diode Attenuators provide electronically controlled attenuation for microwave and high-frequency RF systems requiring precise signal level adjustment and broad frequency coverage.

The 900-.1/40/25/KF operates across the 0.1–40 GHz frequency range, offering a 25 dB attenuation range controlled through an external 0–5 V control bias. The attenuator requires a +8–12 V DC bias supply and supports RF input power levels up to +20 dBm.

Its broadband design and 2.92 mm (K) coaxial connectors allow integration into RF test setups, communication equipment, and automated signal control systems without mechanical switching.


Typical Applications

  • Broadband RF signal level control
  • Receiver protection
  • Automatic level control (ALC)
  • Microwave test and measurement systems
  • RF signal conditioning
  • Radar and communication systems
  • Automated RF testing and calibration
  • Broadband signal attenuation from 0.1 GHz to 40 GHz

Technical Specifications

Parameter Specification
Model 900-.1/40/25/KF
Frequency Range 0.1–40 GHz
Insertion Loss (Typ.) Not specified
Attenuation Range 25 dB
Power Handling +20 dBm
DC Bias +8–12 V
Control Bias 0–5 V
RF Ports 2.92 mm (K) Coaxial Connector

Customization & Engineering Support

Mi-Wave designs and manufactures both standard and custom voltage-controlled attenuators for microwave and millimeter-wave applications. Frequency coverage, attenuation range, power handling, control voltage requirements, and connector configurations can be tailored to meet specific system requirements.

Contact Mi-Wave to discuss your 900-.1/40/25/KF broadband voltage controlled attenuator requirements or custom specifications.

Watch our informational video to learn more about this product family, including its key features, operating principles, and common applications.

*Actual product may be different from the image shown per customers specifcations
*All data presented is collected from a sample lot.
* Actual data may vary unit to unit, slightly.
*All testing was performed under +25 °C case temperature.
*Consult factory to confirm if material, plating, size, shape, orientation and any electrical parameter is critical for the application as website information is for reference only.
*Millimeter Wave Products, Inc. reserves the right to change the information presented on website without notice as we continue to enhance the performance and design of our products.

PIN Diode Voltage Variable Attenuators

PIN Diode Voltage Variable Attenuators provide continuous, analog RF attenuation control across microwave and millimeter-wave frequency ranges. These high-performance attenuators are engineered for precise signal level adjustment in demanding RF systems where stability, repeatability, and high-frequency performance are critical.

As part of the Millimeter-Wave Products portfolio, these voltage-controlled attenuators support a wide range of frequency bands, attenuation ranges, and control voltage configurations to meet diverse system requirements.


How PIN Diode Attenuators Work

The PIN diode topology adjusts RF resistance through bias current control, enabling smooth and continuous attenuation without mechanical switching. This allows precise implementation of:

  • Automatic Level Control (ALC)
  • Automatic Gain Control (AGC)
  • Receiver protection
  • Dynamic signal conditioning

Because attenuation varies proportionally with bias current, engineers can achieve stable RF gain management across wide frequency bands while preserving signal integrity.


Electrical Performance Characteristics

Key performance attributes include:

  • Attenuation range and linearity
  • Low insertion loss
  • Attenuation flatness across frequency
  • Low VSWR and impedance matching
  • Power handling and thermal stability

In high-frequency systems constructed with waveguides, bends, and twists, maintaining stable attenuation and impedance control is essential to preserving link margin and overall RF system performance.


Integration in RF Signal Chains

PIN diode voltage variable attenuators are commonly integrated with:

Within transmit and receive architectures, attenuators are used to regulate signal levels, prevent front-end overload, and maintain proper dynamic range throughout the RF chain.


Mechanical Configurations and Reliability

Mi-Wave PIN diode attenuators are available in configurations suitable for laboratory integration, rack-mounted systems, and embedded subsystem applications. Mechanical packaging and thermal management are designed to ensure reliable operation under continuous-wave (CW) and high-duty-cycle conditions across microwave and millimeter-wave environments.


Custom Solutions

Because attenuation requirements vary by frequency band, attenuation range, control interface, and overall RF system architecture, Mi-Wave works closely with customers to define optimized electrical and mechanical configurations.

Explore the full RF and microwave component portfolio or contact Mi-Wave to discuss custom PIN diode voltage variable attenuator solutions tailored to your microwave and millimeter-wave application.

Interested in this product or other Mi-Wave solutions?

Contact our team to discuss your frequency range, interface needs, and application requirements.

Custom configurations are available for specialized RF, microwave, and millimeter-wave systems.

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